Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs

Keyphrases

• Active Power Consumption 33%
• Aspect Ratio 33%
• Current Variation 66%
• Downscaling 33%
• Fin Field-effect Transistor (FinFET) 33%
• Fin Height 33%
• Fin Width 33%
• Gate Capacitance 33%
• Gate Oxide 33%
• Geometric Variation 100%
• Height Scale 33%
• Induced Variation 33%
• Ion Current 33%
• Line Roughness 100%
• Line Variation 66%
• Off-state Leakage Current 33%
• Oxide Thickness Variation 66%
• Roughness Effect 100%
• Static Power 33%
• Surface Roughness 100%
• Tri-gate 33%
• Trigate FinFET 100%

Engineering

• Active Power 50%
• Aspect Ratio 50%
• Electric Power Utilization 50%
• Experimental Result 50%
• Fin Height 50%
• Fin Width 50%
• Gate Capacitance 50%
• Gate Oxide 50%
• Induced Roughness 50%
• Oxide Thickness 100%
• Roughness Effect 100%