Ge/IIIV fin field-effect transistor common gate process and numerical simulations

Physics & Astronomy

• atomic layer epitaxy 43%
• computational fluid dynamics 48%
• costs 15%
• current density 14%
• dielectric properties 17%
• fabrication 25%
• field effect transistors 65%
• fins 100%
• frequency measurement 24%
• gas flow 19%
• industries 17%
• leakage 17%
• low frequencies 14%
• manufacturing 34%
• optimization 13%
• oxides 12%
• performance 18%
• pressure distribution 20%
• simulation 31%
• transistors 33%

Chemical Compounds

• Atomic Layer Epitaxy 96%
• Current Density 30%
• Dielectric Property 41%
• Field Effect 82%
• Industry 30%
• Leakage Current 54%
• Liquid Film 40%
• Pressure 24%
• Reduction 19%
• Semiconductor 31%
• Simulation 52%
• Strength 26%

Engineering & Materials Science

• Atomic layer deposition 63%
• Computational fluid dynamics 31%
• Computer simulation 45%
• Costs 7%
• Current density 20%
• Deposition rates 26%
• Dielectric properties 25%
• Experiments 7%
• Fabrication 30%
• Field effect transistors 89%
• Flow of gases 20%
• Hot Temperature 30%
• Industry 9%
• Leakage currents 22%
• Oxide semiconductors 24%
• Semiconductor materials 18%
• Substrates 14%
• Transistors 35%