Ge photodetector monolithically integrated on si by rapid-melting-growth technique

Po Han Huang, Chin Hsien Chou, Cheng Lun Hsin

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Germanium-based optoelectronic devices have the potential applications in optical communication and detections. In this letter, we demonstrated that high-quality Ge quasi-epilayer can be achieved by rapid-melting-growth and integrated-circuit compatible process. Raman and microscopy techniques revealed that the as-deposited Ge on the silicon substrate became quasi-single crystalline while nanocrystallites embedded within the Ge layer. The Ge/Si heterostructure photodetectors were fabricated with desirable responsivity of 0.22 A/W at -1 V reverse bias and the ratio of photocurrent and dark current is up to 2000 at -0.65 V. This technique demonstrated the possibility of monolithic integration of Ge photodetector for future optical communications at 1.31μm in wavelength with Si electronic circuitry.

Original languageEnglish
Article number7065220
Pages (from-to)1254-1256
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number12
StatePublished - 15 Jun 2015


  • GE
  • PIN photodetector
  • Rapid-melting-growth


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