Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

C. J. Su, T. C. Hong, Y. C. Tsou, F. J. Hou, P. J. Sung, M. S. Yeh, C. C. Wan, K. H. Kao, Y. T. Tang, C. H. Chiu, C. J. Wang, S. T. Chung, T. Y. You, Y. C. Huang, C. T. Wu, K. L. Lin, G. L. Luo, K. P. Huang, Y. J. Lee, T. S. ChaoW. F. Wu, G. W. Huang, J. M. Shieh, W. K. Yeh, Y. H. Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Fingerprint

Dive into the research topics of 'Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds