Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

C. J. Su, T. C. Hong, Y. C. Tsou, F. J. Hou, P. J. Sung, M. S. Yeh, C. C. Wan, K. H. Kao, Y. T. Tang, C. H. Chiu, C. J. Wang, S. T. Chung, T. Y. You, Y. C. Huang, C. T. Wu, K. L. Lin, G. L. Luo, K. P. Huang, Y. J. Lee, T. S. ChaoW. F. Wu, G. W. Huang, J. M. Shieh, W. K. Yeh, Y. H. Wang

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