Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

H. K. Lin, Y. C. Lin, F. H. Huang, T. W. Fan, P. C. Chiu, J. I. Chyi, C. H. Ko, T. M. Kuan, M. K. Hsieh, W. C. Lee, C. H. Wann

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at VDS = 0.5 V and ID = 100 mA/mm, and gate leakage to 1 × 10-3 mA/mm from 4 at VGS = -1.2 V and VDS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.

Original languageEnglish
Pages (from-to)475-478
Number of pages4
JournalSolid-State Electronics
Volume54
Issue number4
DOIs
StatePublished - Apr 2010

Keywords

  • HEMT
  • InAs/AlSb

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