Abstract
Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at VDS = 0.5 V and ID = 100 mA/mm, and gate leakage to 1 × 10-3 mA/mm from 4 at VGS = -1.2 V and VDS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.
Original language | English |
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Pages (from-to) | 475-478 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 54 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2010 |
Keywords
- HEMT
- InAs/AlSb