Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Keyphrases

• AlGaN-GaN 100%
• Heterostructure Field-effect Transistors 100%
• Induced Current 100%
• Gate Leakage Current 100%
• Schottky Gate 100%
• MISHFET 100%
• Metal-insulator-semiconductor 80%
• Detrapping 40%
• Dynamic Switching 40%
• Gate Insulator 40%
• On-resistance 20%
• Relaxation Time 20%
• High Energy 20%
• Buffer Layer 20%
• Electron Injection 20%
• GaN Heterostructure 20%
• Hot Carriers 20%
• Stress Conditions 20%
• Switching Performance 20%
• Bias Stress 20%
• Semiconductor Heterostructures 20%
• Channel Layer 20%
• Source Bias 20%
• Off-state Leakage Current 20%
• Energy Carrier 20%
• Critical Voltage 20%
• Voltage Level 20%
• Switching Test 20%
• Resistive Leakage Current 20%

Engineering

• Heterojunctions 100%
• Field-Effect Transistor 100%
• Transients 40%
• Dynamic Switching 40%
• Applied Stress 20%
• Resistive 20%
• Electron Injection 20%
• Buffer Layer 20%
• Stress Condition 20%
• Channel Layer 20%
• Energy Carrier 20%
• Critical Voltage 20%
• Relaxation Time 20%

Material Science

• Field Effect Transistor 100%
• Heterojunction 100%
• Buffer Layer 20%
• Hot Carrier 20%