Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

Yu Chen Lai, Yi Nan Zhong, Ming Yan Tsai, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

Abstract

This study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

Original languageEnglish
Pages (from-to)1162-1166
Number of pages5
JournalJournal of Electronic Materials
Volume50
Issue number3
DOIs
StatePublished - Mar 2021

Keywords

  • AlGaN
  • E-mode
  • GaN
  • HEMT
  • p-GaN

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