GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates

J. R. LaRoche, B. Luo, F. Ren, K. H. Baik, D. Stodilka, B. Gila, C. R. Abernathy, S. J. Pearton, A. Usikov, D. Tsvetkov, V. Soukhoveev, G. Gainer, A. Rechnikov, V. Dimitriev, G. T. Chen, C. C. Pan, J. I. Chyi

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Abstract

GaN/AlGaN high electron mobility transistors (HEMTs) were fabricated on layer structures grown by metal organic chemical vapor deposition on hydride vapor phase epitaxy grown AlN epi-layers on 6H-SiC substrates. The presence of the AlN provides an insulating buffer for effective inter-device isolation, producing isolation currents in the 10-9 A range. These initial HEMTs exhibit saturated drain source current of >400 mA/mm with maximum transconductance of >70 mS/mm. The devices show lower degrees of current collapse relative to more conventional HEMTs fabricated on sapphire substrates, suggesting that the lower defect density is beneficial in reducing surface state trap concentration.

Original languageEnglish
Pages (from-to)193-196
Number of pages4
JournalSolid-State Electronics
Volume48
Issue number1
DOIs
StatePublished - Jan 2004

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