Gan power rectifiers and field-effect transistors on free-standing gan substrates

Keyphrases

• Field-effect Transistors 100%
• Aluminum Oxide 100%
• Power Rectifier 100%
• Field of Power 100%
• AlGaN-GaN 50%
• Scandium Oxide 50%
• Epitaxial Layers 50%
• Turn-on Voltage 50%
• Surface Zone 50%
• GaN Substrate 50%
• Rectifier 50%
• Ni-P 50%
• Electric Power 50%
• Passivation 50%
• On-state Resistance 50%
• MCM2 50%
• Freestanding GaN Substrate 50%
• Electron Accumulation 50%
• Reverse Recovery Time 50%
• Power Transistors 50%
• Positive Temperature Coefficient 50%
• GaN HFET 50%
• Drivetrain 50%
• Hybrid Electric Vehicle 50%
• Utility Industry 50%
• Inverter Module 50%
• Radar Subsystems 50%

Engineering

• Field-Effect Transistor 100%
• Power Rectifier 100%
• Gan Substrate 100%
• Surface Region 50%
• Figure of Merit 50%
• Passivation 50%
• Subsystems 50%
• Reverse Recovery Time 50%
• Positive Temperature Coefficient 50%
• Hybrid Electric Vehicle 50%
• Inverter 50%
• Epitaxial Film 50%

Earth and Planetary Sciences

• Figure of Merit 100%
• Electric Hybrid Vehicles 100%