There are emerging applications for GaN and electronics in control and switching of electric power in the utilities industry, advanced radar sub-systems, and in the drive-trains of hybrid electric vehicles. The key components of the inverter modules for such applications are the power rectifier and transistor. P-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage was ∼5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance was ∼5 mΩ·cm 2 at 300 K. The figure-of-merit was 0.32 MW·cm 2. The reverse recovery time was ≤ 600 ns at 300 K. A comparison of the DC and pulsed characteristics of AlGaN/GaN HFETs on both GaN and Al 2O 3 substrates before and after Sc 2O 3 passivation was performed. HFETs on GaN substrates show less electron accumulation in the gate-drain surface region than do comparable devices on Al 2O 3 substrates.
|Number of pages||15|
|State||Published - 2003|
|Event||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States|
Duration: 12 Oct 2003 → 17 Oct 2003
|Conference||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium|
|Period||12/10/03 → 17/10/03|