GaN enhancement mode metal-oxide semiconductor field effect transistors

Y. Irokawa, Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The initial demonstration of an enhancement mode MgO/p-GaN metal-oxide semiconductor field effect transistor (MOSFET) utilizing Si+ ion implanted regions under the source and drain to provide a source of minority carriers for inversion was reported. The breakdown voltage for an 80 nm thick MgO gate dielectric was ∼14 V, corresponding to a breakdown field strength of 1.75 MVcm-1 and the p-n junction formed between the p-epi and the source had a reverse breakdown voltage >15 V. Inversion of the channel was achieved for gate voltages above 6 V.The maximum transconductance was 5.4 μSmm-1 at a drain-source voltage of 5 V.

Original languageEnglish
Pages (from-to)2668-2671
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
StatePublished - 2005


Dive into the research topics of 'GaN enhancement mode metal-oxide semiconductor field effect transistors'. Together they form a unique fingerprint.

Cite this