Abstract
The initial demonstration of an enhancement mode MgO/p-GaN metal-oxide semiconductor field effect transistor (MOSFET) utilizing Si+ ion implanted regions under the source and drain to provide a source of minority carriers for inversion was reported. The breakdown voltage for an 80 nm thick MgO gate dielectric was ∼14 V, corresponding to a breakdown field strength of 1.75 MVcm-1 and the p-n junction formed between the p-epi and the source had a reverse breakdown voltage >15 V. Inversion of the channel was achieved for gate voltages above 6 V.The maximum transconductance was 5.4 μSmm-1 at a drain-source voltage of 5 V.
Original language | English |
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Pages (from-to) | 2668-2671 |
Number of pages | 4 |
Journal | Physica Status Solidi C: Conferences |
Volume | 2 |
Issue number | 7 |
DOIs | |
State | Published - 2005 |