@article{895c24d6540042af9ca8a918c555b312,
title = "GaN electronics for high power, high temperature applications",
abstract = "The progress in the fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN HBT and GaN MOSFET is reviewed. Improvements in epitaxial layer quality are studied. The advances in fabrication techniques that led to the improvement of device performance are discussed.",
keywords = "Bipolar transistors, GaN, MOSFETs, Rectifiers",
author = "Pearton, {S. J.} and F. Ren and Zhang, {A. P.} and G. Dang and Cao, {X. A.} and Lee, {K. P.} and H. Cho and Gila, {B. P.} and Johnson, {J. W.} and C. Monier and Abernathy, {C. R.} and J. Han and Baca, {A. G.} and Chyi, {J. I.} and Lee, {C. M.} and Nee, {T. E.} and Chuo, {C. C.} and Chu, {S. N.G.}",
note = "Funding Information: The work at the various institutions has been supported by ONR (J.C. Zolper), DARPA (D. Radack), EPRI (B. Damsky), NSF (L. Hess), by BMDO, and National Science Council of ROC. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed–Martin company, for the US Department of Energy.",
year = "2001",
month = may,
day = "22",
doi = "10.1016/S0921-5107(00)00767-4",
language = "???core.languages.en_GB???",
volume = "82",
pages = "227--231",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
number = "1-3",
}