The progress in the fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN HBT and GaN MOSFET is reviewed. Improvements in epitaxial layer quality are studied. The advances in fabrication techniques that led to the improvement of device performance are discussed.
|Number of pages||5|
|Journal||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|State||Published - 22 May 2001|
- Bipolar transistors