GaN electronics for high power, high temperature applications

S. J. Pearton, F. Ren, A. P. Zhang, G. Dang, X. A. Cao, K. P. Lee, H. Cho, B. P. Gila, J. W. Johnson, C. Monier, C. R. Abernathy, J. Han, A. G. Baca, J. I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, S. N.G. Chu

Research output: Contribution to journalArticlepeer-review

98 Scopus citations


The progress in the fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN HBT and GaN MOSFET is reviewed. Improvements in epitaxial layer quality are studied. The advances in fabrication techniques that led to the improvement of device performance are discussed.

Original languageEnglish
Pages (from-to)227-231
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
StatePublished - 22 May 2001


  • Bipolar transistors
  • GaN
  • Rectifiers


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