GaN-based dual color LEDs with P-type insertion layer for balancing two-color intensities

Kai Lun Chi, Shu Ting Yeh, Yu Hsiang Yeh, Kun Yan Lin, Jin Wei Shi, Yuh Renn Wu, J. K. Sheu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

By inserting p-type layers into active regions of dual-color GaN LEDs to uniform carrier distribution, the output intensities from quantum-wells near n- and p-sides can be balanced under a low driving-current density (< 45 A/cm2).

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
DOIs
StatePublished - 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 9 Jun 201314 Jun 2013

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Conference

Conference2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/TerritoryUnited States
CitySan Jose, CA
Period9/06/1314/06/13

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