GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base

S. L. Fu, S. Park, Y. M. Hsin, M. C. Ho, T. P. Chin, P. L. Yu, C. W. Tu, P. M. Asbeck, T. Nakamura

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations
Original languageEnglish
Article number1009428
Pages (from-to)91-92
Number of pages2
JournalDevice Research Conference - Conference Digest, DRC
StatePublished - 1994
Event52nd Annual Device Research Conference, DRC 1994 - Boulder, United States
Duration: 20 Jun 199422 Jun 1994

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