Original language | English |
---|---|
Article number | 1009428 |
Pages (from-to) | 91-92 |
Number of pages | 2 |
Journal | Device Research Conference - Conference Digest, DRC |
DOIs | |
State | Published - 1994 |
Event | 52nd Annual Device Research Conference, DRC 1994 - Boulder, United States Duration: 20 Jun 1994 → 22 Jun 1994 |
GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base
S. L. Fu, S. Park, Y. M. Hsin, M. C. Ho, T. P. Chin, P. L. Yu, C. W. Tu, P. M. Asbeck, T. Nakamura
Research output: Contribution to journal › Conference article › peer-review
4
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citations