TY - JOUR
T1 - Gain-bandwidth analysis of broadband darlington amplifiers in HBT-HEMT process
AU - Weng, Shou Hsien
AU - Chang, Hong Yeh
AU - Chiong, Chau Ching
AU - Wang, Yu Chi
N1 - Funding Information:
Manuscript received July 19, 2012; accepted August 01, 2012. Date of publication September 17, 2012; date of current version October 29, 2012. This work was supported in part by the National Science Council of Taiwan, under Grant NSC 99-2221-E-008-097-MY3, Grant NSC 100-2221-E-008-118, and Grant NSC 101-2221-E-008-072-MY3, under the Atacama Large Millimeter/submillimeter Array–Taiwan (ALMA-T) Research Project, by the WIN Semiconductors Corporation, and by the Chip Implementation Center (CIC).
PY - 2012
Y1 - 2012
N2 - Broadband Darlington amplifiers using a GaAs heterojunction bipolar transistor (HBT) high electron-mobility transistor (HEMT) process are reported in this paper. The gain-bandwidth analysis of the Darlington amplifiers using HEMT-HBT, HBT-HEMT, HEMT-HEMT, and HBT-HBT configurations are presented. The bandwidth, gain, input, and output impedances are investigated with transistor size, feedback resistances, and series peaking inductance. The design methodology of the broadband Darlington amplifier in the HBT-HEMT process is successfully developed, and the direct-coupled technique is also addressed for high-speed data communications. Furthermore, two monolithic HEMT-HBT and HEMT-HEMT Darlington amplifiers are achieved from dc to millimeter wave, and successfully evaluated with a 25-Gb/s eye diagram. The HEMT-HBT Darlington amplifier demonstrates the best gain-bandwidth product with good input/output return losses among the four configurations.
AB - Broadband Darlington amplifiers using a GaAs heterojunction bipolar transistor (HBT) high electron-mobility transistor (HEMT) process are reported in this paper. The gain-bandwidth analysis of the Darlington amplifiers using HEMT-HBT, HBT-HEMT, HEMT-HEMT, and HBT-HBT configurations are presented. The bandwidth, gain, input, and output impedances are investigated with transistor size, feedback resistances, and series peaking inductance. The design methodology of the broadband Darlington amplifier in the HBT-HEMT process is successfully developed, and the direct-coupled technique is also addressed for high-speed data communications. Furthermore, two monolithic HEMT-HBT and HEMT-HEMT Darlington amplifiers are achieved from dc to millimeter wave, and successfully evaluated with a 25-Gb/s eye diagram. The HEMT-HBT Darlington amplifier demonstrates the best gain-bandwidth product with good input/output return losses among the four configurations.
KW - Amplifier
KW - GaAs
KW - Heterojunction bipolar transistor (HBT)
KW - High electron-mobility transistor (HEMT)
KW - Monolithic microwave integrated circuit (MMIC)
UR - http://www.scopus.com/inward/record.url?scp=84869238495&partnerID=8YFLogxK
U2 - 10.1109/TMTT.2012.2215051
DO - 10.1109/TMTT.2012.2215051
M3 - 期刊論文
AN - SCOPUS:84869238495
SN - 0018-9480
VL - 60
SP - 3458
EP - 3473
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 11
M1 - 6341879
ER -