GaAsSb/InGaAs tunnel field effect transistor with a pocket layer

Tzu Yu Yu, Liang Shuan Peng, Chun Wei Lin, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


This work proposes a new GaAs0.51Sb0.49/In0.53Ga0.47As heterojunction tunnel field effect transistor (HTFET) with a 6-nm In0.7Ga0.3As layer (pocket) between the source and channel. Compared with InGaAs homojunction TFETs, the proposed HTFET has a steeper subthreshold swing at a higher drain current, owing to its lower source-to-channel tunnel barrier height. It has a maximum on-state current of 11.98 μA/μm at room temperature, which is more than ten times the on-state current obtained from an InGaAs homojunction TFET.

Original languageEnglish
Pages (from-to)235-237
Number of pages3
JournalMicroelectronics Reliability
StatePublished - Apr 2018


  • GaAsSb
  • InGaAs
  • Pocket
  • Tunnel field-effect transistors (TFETs)


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