GaAsSb/InGaAs tunnel field effect transistor with a pocket layer

Tzu Yu Yu; Liang Shuan Peng; Chun Wei Lin; Yue Ming Hsin

doi:10.1016/j.microrel.2017.05.017

GaAsSb/InGaAs tunnel field effect transistor with a pocket layer

Tzu Yu Yu, Liang Shuan Peng, Chun Wei Lin, Yue Ming Hsin

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This work proposes a new GaAs_0.51Sb_0.49/In_0.53Ga_0.47As heterojunction tunnel field effect transistor (HTFET) with a 6-nm In_0.7Ga_0.3As layer (pocket) between the source and channel. Compared with InGaAs homojunction TFETs, the proposed HTFET has a steeper subthreshold swing at a higher drain current, owing to its lower source-to-channel tunnel barrier height. It has a maximum on-state current of 11.98 μA/μm at room temperature, which is more than ten times the on-state current obtained from an InGaAs homojunction TFET.

Original language	English
Pages (from-to)	235-237
Number of pages	3
Journal	Microelectronics Reliability
Volume	83
DOIs	https://doi.org/10.1016/j.microrel.2017.05.017
State	Published - Apr 2018

Keywords

GaAsSb
InGaAs
Pocket
Tunnel field-effect transistors (TFETs)

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10.1016/j.microrel.2017.05.017

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title = "GaAsSb/InGaAs tunnel field effect transistor with a pocket layer",

abstract = "This work proposes a new GaAs0.51Sb0.49/In0.53Ga0.47As heterojunction tunnel field effect transistor (HTFET) with a 6-nm In0.7Ga0.3As layer (pocket) between the source and channel. Compared with InGaAs homojunction TFETs, the proposed HTFET has a steeper subthreshold swing at a higher drain current, owing to its lower source-to-channel tunnel barrier height. It has a maximum on-state current of 11.98 μA/μm at room temperature, which is more than ten times the on-state current obtained from an InGaAs homojunction TFET.",

keywords = "GaAsSb, InGaAs, Pocket, Tunnel field-effect transistors (TFETs)",

author = "Yu, {Tzu Yu} and Peng, {Liang Shuan} and Lin, {Chun Wei} and Hsin, {Yue Ming}",

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TY - JOUR

T1 - GaAsSb/InGaAs tunnel field effect transistor with a pocket layer

AU - Yu, Tzu Yu

AU - Peng, Liang Shuan

AU - Lin, Chun Wei

AU - Hsin, Yue Ming

PY - 2018/4

Y1 - 2018/4

N2 - This work proposes a new GaAs0.51Sb0.49/In0.53Ga0.47As heterojunction tunnel field effect transistor (HTFET) with a 6-nm In0.7Ga0.3As layer (pocket) between the source and channel. Compared with InGaAs homojunction TFETs, the proposed HTFET has a steeper subthreshold swing at a higher drain current, owing to its lower source-to-channel tunnel barrier height. It has a maximum on-state current of 11.98 μA/μm at room temperature, which is more than ten times the on-state current obtained from an InGaAs homojunction TFET.

AB - This work proposes a new GaAs0.51Sb0.49/In0.53Ga0.47As heterojunction tunnel field effect transistor (HTFET) with a 6-nm In0.7Ga0.3As layer (pocket) between the source and channel. Compared with InGaAs homojunction TFETs, the proposed HTFET has a steeper subthreshold swing at a higher drain current, owing to its lower source-to-channel tunnel barrier height. It has a maximum on-state current of 11.98 μA/μm at room temperature, which is more than ten times the on-state current obtained from an InGaAs homojunction TFET.

KW - GaAsSb

KW - InGaAs

KW - Pocket

KW - Tunnel field-effect transistors (TFETs)

UR - http://www.scopus.com/inward/record.url?scp=85019570769&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2017.05.017

DO - 10.1016/j.microrel.2017.05.017

M3 - 期刊論文

AN - SCOPUS:85019570769

SN - 0026-2714

VL - 83

SP - 235

EP - 237

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

GaAsSb/InGaAs tunnel field effect transistor with a pocket layer

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Keywords

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