GaAsSb/InGaAs heterojunction tunnel field-effect transistors with a heterogeneous channel

Chun Wei Lin, Hung Ru Chen, Yu Tzu Yu, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This study presents a new structure to improve off-state current and ambipolar conduction in GaAsSb/InGaAs heterojunction tunnel field-effect transistors (HTFET). A GaAsSb/InGaAs heterogeneous channel was proposed to form p-GaAsSb/i-InGaAs junction at the source side and i-GaAsSb/n-InGaAs junction at the drain side. In the off-state bias condition, the band offsets of GaAsSb/InGaAs in the channel can prevent electrons tunneling to the drain side to reduce the leakage current and ambipolar conduction. Through simulation, heterogeneous channel HTFETs demonstrate that the off-state current can be reduced by four orders of magnitude and still demonstrate a high on-state current compared with GaAsSb/InGaAs HTFETs. As a result, the proposed heterogeneous channel HTFET exhibits suppressed ambipolar conduction even when the drain doping is as high as 1 × 1019 cm-3.

Original languageEnglish
Article number031201
JournalJapanese Journal of Applied Physics
Volume57
Issue number3
DOIs
StatePublished - Mar 2018

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