GaAs/In 0.5Ga 0.5P laser power converter with undercut mesa for simultaneous high-speed data detection and DC electrical power generation

Jin Wei Shi, Cheng Yo Tsai, Chan Shan Yang, Feng Ming Kuo, Yue Ming Hsin, J. E. Bowers, Ci Ling Pan

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We demonstrate novel GaAs/In 0.5Ga 0.5P high-speed laser power converters (LPCs), which not only can detect the envelope of incoming high-speed optical data but also can efficiently convert its optical dc component to dc electrical power. By utilizing the graded p-type GaAs and n-type In 0.5Ga 0.5P layers as photoabsorption (P) and collector (C) layers, respectively, the problem of slow-motion holes under 830-nm-optical-wavelength excitation and the conduction-band-offset-induced electron blocking effect between the P/C layers, which seriously limit the high-speed performance of LPC, can both be eliminated. Furthermore, by using the undercut mesa structure of the In 0.5Ga 0.5P C layer to further reduce the large junction capacitance under forward operation, we can achieve invariable high-speed performance (∼9 GHz) from zero to near turn-on voltage (+0.8 V), which corresponds to the operation point of our LPC with the maximum power conversion efficiency (∼ 15%).

Original languageEnglish
Article number6151018
Pages (from-to)561-563
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
StatePublished - Apr 2012

Keywords

  • Photodiodes (PDs)
  • photovoltaic

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