GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

Y. M. Hsin, K. P. Hsueh, C. J. Hsu, L. W. Wu

Research output: Contribution to journalLetterpeer-review

Abstract

Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150°C in air.

Original languageEnglish
Pages (from-to)L1084-L1085
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number10 B
DOIs
StatePublished - 15 Oct 2001

Keywords

  • GaAs
  • Ion implantation
  • MESFET

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