GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

Y. M. Hsin; K. P. Hsueh; C. J. Hsu; L. W. Wu

doi:10.1143/jjap.40.l1084

GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

Y. M. Hsin, K. P. Hsueh, C. J. Hsu, L. W. Wu

Research output: Contribution to journal › Letter › peer-review

Abstract

Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150°C in air.

Original language	English
Pages (from-to)	L1084-L1085
Journal	Japanese Journal of Applied Physics
Volume	40
Issue number	10 B
DOIs	https://doi.org/10.1143/jjap.40.l1084
State	Published - 15 Oct 2001

Keywords

GaAs
Ion implantation
MESFET

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title = "GaAs metal-semiconductor field-effect transistor with surface oxygen implantation",

abstract = "Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150°C in air.",

keywords = "GaAs, Ion implantation, MESFET",

author = "Hsin, {Y. M.} and Hsueh, {K. P.} and Hsu, {C. J.} and Wu, {L. W.}",

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T1 - GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

AU - Hsin, Y. M.

AU - Hsueh, K. P.

AU - Hsu, C. J.

AU - Wu, L. W.

PY - 2001/10/15

Y1 - 2001/10/15

N2 - Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150°C in air.

AB - Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150°C in air.

KW - GaAs

KW - Ion implantation

KW - MESFET

UR - http://www.scopus.com/inward/record.url?scp=0035888673&partnerID=8YFLogxK

U2 - 10.1143/jjap.40.l1084

DO - 10.1143/jjap.40.l1084

M3 - 通訊期刊論文

AN - SCOPUS:0035888673

SN - 0021-4922

VL - 40

SP - L1084-L1085

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 B

ER -

GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

Abstract

Keywords

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