GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength

Shi Hao Guol, Ming Ge Chou, Ying Jay Yang, Chi Kuang Sun, Jin Wei Shi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this study, we demonstrate a transverse junction superluminescent diode (TJ-SLD) with an engagement of chirped In xGa $ 1 - xAsGaAs 0.9P 0.1 strain-compensated multiple-quantum-wells (SC MQWs) at 1.1-μm wavelength. The problem relative to inhomogeneous carrier distribution in each QW, which is a problem in traditional vertical junction SLDs (VJ-SLDs), can be effectively minimized by utilizing the benefit of lateral carrier injection in TJ devices. Our demonstrated device offers significant improvements in threshold current, output power, and optical bandwidths compared to TJ-SLD without SC MQWs. Furthermore, compared with the high-performance ∼1-μm VJ-SLDs, this novel device exhibits a comparable output power and 3-dB bandwidth performance with a more stable electroluminescence spectrum, which varies only negligibly under a wide range of bias current.

Original languageEnglish
Article number5447643
Pages (from-to)917-919
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number12
DOIs
StatePublished - 2010

Keywords

  • Amplified spontaneous emission (ASE)
  • Strain compensation
  • Superluminescent diodes (SLDs)

Fingerprint

Dive into the research topics of 'GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength'. Together they form a unique fingerprint.

Cite this