GaAs-based transverse junction superluminescent diode at 1.1um wavelength region

Shi Hao Guol, Ming Ge Chou, Hung Wang, Ying Jay Yang, Chi Kuang Sun, Jin Wei Shi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report GaAs-based transverse-junction-superluminescent-diodes, characterized as transverse-carrier-flow spread in quantum wells horizontally instead of vertical well-by-well injection. These devices overcome the problem of non-uniform-carrier-distribution and operate at a bio-optical window of 1.1-μm wavelength regime.

Original languageEnglish
Title of host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
StatePublished - 2009
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: 2 Jun 20094 Jun 2009

Publication series

Name2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Conference

Conference2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period2/06/094/06/09

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