GaAs-based transverse junction superluminescent diode at 1.1um wavelength region

Shi Hao Guol, Ming Ge Chou, Jr Hung Wang, Ying Jay Yang, Chi Kuang Sun, Jin Wei Shi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report GaAs-based transverse-junction-superluminescent-diodes, characterized as transverse-carrier-flow spread in quantum wells horizontally instead of vertical well-by-well injection. These devices overcome the problem of non-uniform-carrier-distribution and operate at a bio-optical window of 1.1-μm wavelength regime.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference, IQEC 2009
PublisherOptical Society of America (OSA)
ISBN (Print)9781557528698
DOIs
StatePublished - 2009
EventInternational Quantum Electronics Conference, IQEC 2009 - Baltimore, MD, United States
Duration: 31 May 20095 Jun 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceInternational Quantum Electronics Conference, IQEC 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period31/05/095/06/09

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