Fundamental issues in wafer bonding

U. Gösele; Y. Bluhm; G. Kästner; P. Kopperschmidt; G. Kräuter; R. Scholz; A. Schumacher; St Senz; Q. Y. Tong; L. J. Huang; Y. L. Chao; T. H. Lee

doi:10.1116/1.581788

Fundamental issues in wafer bonding

U. Gösele, Y. Bluhm, G. Kästner, P. Kopperschmidt, G. Kräuter, R. Scholz, A. Schumacher, St Senz, Q. Y. Tong, L. J. Huang, Y. L. Chao, T. H. Lee

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and microelectromechanical systems. The present overview concentrates on some basic issues associated with wafer bonding such as the reactions at the bonding interface during hydrophobic and hydrophilic wafer bonding, as well as during ultrahigh vacuum bonding. Mechanisms of hydrogen-implantation induced layer splitting ("smart-cut" and "smarter-cut" approaches) are also considered. Finally, recent developments in the area of so-called "compliant universal substrates" based on twist wafer bonding are discussed.

Original language	English
Pages (from-to)	1145-1152
Number of pages	8
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	17
Issue number	4
DOIs	https://doi.org/10.1116/1.581788
State	Published - 1999

Access to Document

10.1116/1.581788

Cite this

@article{255b38f94db74e77a787e8c6406414fc,

title = "Fundamental issues in wafer bonding",

abstract = "Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and microelectromechanical systems. The present overview concentrates on some basic issues associated with wafer bonding such as the reactions at the bonding interface during hydrophobic and hydrophilic wafer bonding, as well as during ultrahigh vacuum bonding. Mechanisms of hydrogen-implantation induced layer splitting ({"}smart-cut{"} and {"}smarter-cut{"} approaches) are also considered. Finally, recent developments in the area of so-called {"}compliant universal substrates{"} based on twist wafer bonding are discussed.",

author = "U. G{\"o}sele and Y. Bluhm and G. K{\"a}stner and P. Kopperschmidt and G. Kr{\"a}uter and R. Scholz and A. Schumacher and St Senz and Tong, {Q. Y.} and Huang, {L. J.} and Chao, {Y. L.} and Lee, {T. H.}",

year = "1999",

doi = "10.1116/1.581788",

language = "???core.languages.en_GB???",

volume = "17",

pages = "1145--1152",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

number = "4",

}

TY - JOUR

T1 - Fundamental issues in wafer bonding

AU - Gösele, U.

AU - Bluhm, Y.

AU - Kästner, G.

AU - Kopperschmidt, P.

AU - Kräuter, G.

AU - Scholz, R.

AU - Schumacher, A.

AU - Senz, St

AU - Tong, Q. Y.

AU - Huang, L. J.

AU - Chao, Y. L.

AU - Lee, T. H.

PY - 1999

Y1 - 1999

N2 - Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and microelectromechanical systems. The present overview concentrates on some basic issues associated with wafer bonding such as the reactions at the bonding interface during hydrophobic and hydrophilic wafer bonding, as well as during ultrahigh vacuum bonding. Mechanisms of hydrogen-implantation induced layer splitting ("smart-cut" and "smarter-cut" approaches) are also considered. Finally, recent developments in the area of so-called "compliant universal substrates" based on twist wafer bonding are discussed.

AB - Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and microelectromechanical systems. The present overview concentrates on some basic issues associated with wafer bonding such as the reactions at the bonding interface during hydrophobic and hydrophilic wafer bonding, as well as during ultrahigh vacuum bonding. Mechanisms of hydrogen-implantation induced layer splitting ("smart-cut" and "smarter-cut" approaches) are also considered. Finally, recent developments in the area of so-called "compliant universal substrates" based on twist wafer bonding are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0001608845&partnerID=8YFLogxK

U2 - 10.1116/1.581788

DO - 10.1116/1.581788

M3 - 期刊論文

AN - SCOPUS:0001608845

SN - 0734-2101

VL - 17

SP - 1145

EP - 1152

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Fundamental issues in wafer bonding

Abstract

Access to Document

Fingerprint

Cite this