Fully quaternary In0.52(Al1-xGax)0.48As/ In0.53(AlxGa1-x)0.47As (x= 0.1,0.2) heterostructures on InP for HFETs

L. S. Lai, Y. J. Chan, J. W. Pan, J. I. Chyi

Research output: Contribution to journalConference articlepeer-review

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Abstract

Fully quaternary (FQ-) In0.52(Al1-xGax)0.48As/ In0.53(AlxGa1-x)0.47As (x=0.1,0.2) heterostructure was introduced into doped-channel FETs (FQ-DCFETs) on InP substrates. Based on our previous studies, we observed that by adding a small amount of Ga (10%) atoms into the InAlAs Schottky and buffer layers in the HEMT structure, device performance can be enhanced due to a better quality of InAlGaAs material. Furthermore, by adding a small amount of Al (10% or 20%) atoms into the InGaAs channel layers, the associated impact ionization process can be suppressed in this InAlGaAs channel, and resulted in an enhancement of devices breakdown voltage. Therefore, in this report, we combined both techniques to realize the fully quaternary HFETs and characterize their performance.

Original languageEnglish
Pages (from-to)231-234
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - 1998
EventProceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn
Duration: 11 May 199815 May 1998

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