Fully quaternary In0.52(Al1-xGax)0.48As/ In0.53(AlxGa1-x)0.47As (x= 0.1,0.2) heterostructures on InP for HFETs

L. S. Lai; Y. J. Chan; J. W. Pan; J. I. Chyi

Fully quaternary In_0.52(Al_1-xGa_x)_0.48As/ In_0.53(Al_xGa_1-x)_0.47As (x= 0.1,0.2) heterostructures on InP for HFETs

L. S. Lai, Y. J. Chan, J. W. Pan, J. I. Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Fully quaternary (FQ-) In_0.52(Al_1-xGa_x)_0.48As/ In_0.53(Al_xGa_1-x)_0.47As (x=0.1,0.2) heterostructure was introduced into doped-channel FETs (FQ-DCFETs) on InP substrates. Based on our previous studies, we observed that by adding a small amount of Ga (10%) atoms into the InAlAs Schottky and buffer layers in the HEMT structure, device performance can be enhanced due to a better quality of InAlGaAs material. Furthermore, by adding a small amount of Al (10% or 20%) atoms into the InGaAs channel layers, the associated impact ionization process can be suppressed in this InAlGaAs channel, and resulted in an enhancement of devices breakdown voltage. Therefore, in this report, we combined both techniques to realize the fully quaternary HFETs and characterize their performance.

Original language	English
Pages (from-to)	231-234
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1998
Event	Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn Duration: 11 May 1998 → 15 May 1998

Cite this

@article{9436785357a44b79a49eb823680a6222,

title = "Fully quaternary In0.52(Al1-xGax)0.48As/ In0.53(AlxGa1-x)0.47As (x= 0.1,0.2) heterostructures on InP for HFETs",

abstract = "Fully quaternary (FQ-) In0.52(Al1-xGax)0.48As/ In0.53(AlxGa1-x)0.47As (x=0.1,0.2) heterostructure was introduced into doped-channel FETs (FQ-DCFETs) on InP substrates. Based on our previous studies, we observed that by adding a small amount of Ga (10%) atoms into the InAlAs Schottky and buffer layers in the HEMT structure, device performance can be enhanced due to a better quality of InAlGaAs material. Furthermore, by adding a small amount of Al (10% or 20%) atoms into the InGaAs channel layers, the associated impact ionization process can be suppressed in this InAlGaAs channel, and resulted in an enhancement of devices breakdown voltage. Therefore, in this report, we combined both techniques to realize the fully quaternary HFETs and characterize their performance.",

author = "Lai, {L. S.} and Chan, {Y. J.} and Pan, {J. W.} and Chyi, {J. I.}",

year = "1998",

language = "???core.languages.en_GB???",

pages = "231--234",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials ; Conference date: 11-05-1998 Through 15-05-1998",

}

TY - JOUR

T1 - Fully quaternary In0.52(Al1-xGax)0.48As/ In0.53(AlxGa1-x)0.47As (x= 0.1,0.2) heterostructures on InP for HFETs

AU - Lai, L. S.

AU - Chan, Y. J.

AU - Pan, J. W.

AU - Chyi, J. I.

PY - 1998

Y1 - 1998

N2 - Fully quaternary (FQ-) In0.52(Al1-xGax)0.48As/ In0.53(AlxGa1-x)0.47As (x=0.1,0.2) heterostructure was introduced into doped-channel FETs (FQ-DCFETs) on InP substrates. Based on our previous studies, we observed that by adding a small amount of Ga (10%) atoms into the InAlAs Schottky and buffer layers in the HEMT structure, device performance can be enhanced due to a better quality of InAlGaAs material. Furthermore, by adding a small amount of Al (10% or 20%) atoms into the InGaAs channel layers, the associated impact ionization process can be suppressed in this InAlGaAs channel, and resulted in an enhancement of devices breakdown voltage. Therefore, in this report, we combined both techniques to realize the fully quaternary HFETs and characterize their performance.

AB - Fully quaternary (FQ-) In0.52(Al1-xGax)0.48As/ In0.53(AlxGa1-x)0.47As (x=0.1,0.2) heterostructure was introduced into doped-channel FETs (FQ-DCFETs) on InP substrates. Based on our previous studies, we observed that by adding a small amount of Ga (10%) atoms into the InAlAs Schottky and buffer layers in the HEMT structure, device performance can be enhanced due to a better quality of InAlGaAs material. Furthermore, by adding a small amount of Al (10% or 20%) atoms into the InGaAs channel layers, the associated impact ionization process can be suppressed in this InAlGaAs channel, and resulted in an enhancement of devices breakdown voltage. Therefore, in this report, we combined both techniques to realize the fully quaternary HFETs and characterize their performance.

UR - http://www.scopus.com/inward/record.url?scp=0032287484&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0032287484

SN - 1092-8669

SP - 231

EP - 234

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials

Y2 - 11 May 1998 through 15 May 1998

ER -

Fully quaternary In0.52(Al1-xGax)0.48As/ In0.53(AlxGa1-x)0.47As (x= 0.1,0.2) heterostructures on InP for HFETs

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Fully quaternary In_0.52(Al_1-xGa_x)_0.48As/ In_0.53(Al_xGa_1-x)_0.47As (x= 0.1,0.2) heterostructures on InP for HFETs