Fully integrated microwave frequency synthesizer on heterogeneous silicon-III/V

Jared Hulme; M. J. Kennedy; Rui Lin Chao; Linjun Liang; Tin Komljenovic; Jin Wei Shi; Bogdan Szafraniec; Doug Baney; J. E. Bowers

doi:10.1364/OE.25.002422

Fully integrated microwave frequency synthesizer on heterogeneous silicon-III/V

Jared Hulme, M. J. Kennedy, Rui Lin Chao, Linjun Liang, Tin Komljenovic, Jin Wei Shi, Bogdan Szafraniec, Doug Baney, J. E. Bowers

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

We demonstrate a photonic microwave generator on the heterogeneous silicon-InP platform. Waveguide photodiodes with a 3 dB bandwidth of 65 GHz and 0.4 A/W responsivity are integrated with lasers that tune over 42 nm with less than 150 kHz linewidth. Microwave signal generation from 1 to 112 GHz is achieved.

Original language	English
Pages (from-to)	2422-2431
Number of pages	10
Journal	Optics Express
Volume	25
Issue number	3
DOIs	https://doi.org/10.1364/OE.25.002422
State	Published - 6 Feb 2017

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10.1364/OE.25.002422

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abstract = "We demonstrate a photonic microwave generator on the heterogeneous silicon-InP platform. Waveguide photodiodes with a 3 dB bandwidth of 65 GHz and 0.4 A/W responsivity are integrated with lasers that tune over 42 nm with less than 150 kHz linewidth. Microwave signal generation from 1 to 112 GHz is achieved.",

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AU - Hulme, Jared

AU - Kennedy, M. J.

AU - Chao, Rui Lin

AU - Liang, Linjun

AU - Komljenovic, Tin

AU - Shi, Jin Wei

AU - Szafraniec, Bogdan

AU - Baney, Doug

AU - Bowers, J. E.

PY - 2017/2/6

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N2 - We demonstrate a photonic microwave generator on the heterogeneous silicon-InP platform. Waveguide photodiodes with a 3 dB bandwidth of 65 GHz and 0.4 A/W responsivity are integrated with lasers that tune over 42 nm with less than 150 kHz linewidth. Microwave signal generation from 1 to 112 GHz is achieved.

AB - We demonstrate a photonic microwave generator on the heterogeneous silicon-InP platform. Waveguide photodiodes with a 3 dB bandwidth of 65 GHz and 0.4 A/W responsivity are integrated with lasers that tune over 42 nm with less than 150 kHz linewidth. Microwave signal generation from 1 to 112 GHz is achieved.

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M3 - 期刊論文

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JO - Optics Express

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Fully integrated microwave frequency synthesizer on heterogeneous silicon-III/V

Abstract

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