FTO films deposited in transition and oxide modes by magnetron sputtering using Sn metal target

Bo Huei Liao; Shih Hao Chan; Cheng Chung Lee; Sheng Hui Chen; Donyau Chiang

FTO films deposited in transition and oxide modes by magnetron sputtering using Sn metal target

Bo Huei Liao, Shih Hao Chan, Cheng Chung Lee, Sheng Hui Chen, Donyau Chiang

Department of Optics and Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Fluorine doped tin oxide (FTO) films were prepared by a pulse DC magnetron sputtering method with a metal Sn target. FTO films were deposited under two different modes to evaluate their respective optical and electrical properties. In the transition mode, the lowest resistivity of the FTO film was 1.63×10^-3 Ω-cm with the average transmittance of 80 % in visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H₂ could achieve even better resistivity lower to 8.42×10^-4 Ω-cm and the higher average transmittance up to 81.08 % in visible region.

Original language	English
Title of host publication	Optical Interference Coatings, OIC 2013
State	Published - 2013
Event	Optical Interference Coatings, OIC 2013 - Whistler, Canada Duration: 16 Jun 2013 → 21 Jun 2013

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Optical Interference Coatings, OIC 2013
Country/Territory	Canada
City	Whistler
Period	16/06/13 → 21/06/13

Cite this

@inproceedings{beddca716dad4a8b81e78acdfc732493,

title = "FTO films deposited in transition and oxide modes by magnetron sputtering using Sn metal target",

abstract = "Fluorine doped tin oxide (FTO) films were prepared by a pulse DC magnetron sputtering method with a metal Sn target. FTO films were deposited under two different modes to evaluate their respective optical and electrical properties. In the transition mode, the lowest resistivity of the FTO film was 1.63×10-3 Ω-cm with the average transmittance of 80 % in visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2 could achieve even better resistivity lower to 8.42×10-4 Ω-cm and the higher average transmittance up to 81.08 % in visible region.",

author = "Liao, {Bo Huei} and Chan, {Shih Hao} and Lee, {Cheng Chung} and Chen, {Sheng Hui} and Donyau Chiang",

year = "2013",

language = "???core.languages.en_GB???",

isbn = "9781557529701",

series = "Optics InfoBase Conference Papers",

booktitle = "Optical Interference Coatings, OIC 2013",

note = "null ; Conference date: 16-06-2013 Through 21-06-2013",

}

TY - GEN

T1 - FTO films deposited in transition and oxide modes by magnetron sputtering using Sn metal target

AU - Liao, Bo Huei

AU - Chan, Shih Hao

AU - Lee, Cheng Chung

AU - Chen, Sheng Hui

AU - Chiang, Donyau

PY - 2013

Y1 - 2013

N2 - Fluorine doped tin oxide (FTO) films were prepared by a pulse DC magnetron sputtering method with a metal Sn target. FTO films were deposited under two different modes to evaluate their respective optical and electrical properties. In the transition mode, the lowest resistivity of the FTO film was 1.63×10-3 Ω-cm with the average transmittance of 80 % in visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2 could achieve even better resistivity lower to 8.42×10-4 Ω-cm and the higher average transmittance up to 81.08 % in visible region.

AB - Fluorine doped tin oxide (FTO) films were prepared by a pulse DC magnetron sputtering method with a metal Sn target. FTO films were deposited under two different modes to evaluate their respective optical and electrical properties. In the transition mode, the lowest resistivity of the FTO film was 1.63×10-3 Ω-cm with the average transmittance of 80 % in visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2 could achieve even better resistivity lower to 8.42×10-4 Ω-cm and the higher average transmittance up to 81.08 % in visible region.

UR - http://www.scopus.com/inward/record.url?scp=84898075131&partnerID=8YFLogxK

M3 - 會議論文篇章

AN - SCOPUS:84898075131

SN - 9781557529701

T3 - Optics InfoBase Conference Papers

BT - Optical Interference Coatings, OIC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

FTO films deposited in transition and oxide modes by magnetron sputtering using Sn metal target

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