FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target

Bo Huei Liao, Shih Hao Chan, Cheng Chung Lee, Chien Cheng Kuo, Sheng Hui Chen, Donyau Chiang

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Fluorine-doped tin oxide (FTO) films were prepared by pulsed DC magnetron sputtering with a metal Sn target. Two different modes were applied to deposit the FTO films, and their respective optical and electrical properties were evaluated. In the transition mode, the minimum resistivity of the FTO film was 1.63 × 10-3Ωcm with average transmittance of 80.0% in the visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2could achieve even lower resistivity to 8.42 × 10-4Ωcm and higher average transmittance up to 81.1% in the visible region.

Original languageEnglish
Pages (from-to)A148-A153
JournalApplied Optics
Issue number4
DOIs
StatePublished - 1 Feb 2014

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