Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array

E. R. Hsieh, X. Zheng, B. Q. Le, Y. C. Shih, R. M. Radway, M. Nelson, S. Mitra, S. Wong

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving 1T8R array with 4 bits per RRAM. We report SET/RESET endurance of 100K cycles and 10-year retention at 110°C.

Original languageEnglish
Article number9336666
Pages (from-to)335-338
Number of pages4
JournalIEEE Electron Device Letters
Volume42
Issue number3
DOIs
StatePublished - Mar 2021

Keywords

  • 1T8R
  • 4-bits-per-RRAM
  • gradual-SET/RESET
  • RRAM

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