Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array

E. R. Hsieh; X. Zheng; B. Q. Le; Y. C. Shih; R. M. Radway; M. Nelson; S. Mitra; S. Wong

doi:10.1109/LED.2021.3055017

Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array

E. R. Hsieh, X. Zheng, B. Q. Le, Y. C. Shih, R. M. Radway, M. Nelson, S. Mitra, S. Wong

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving 1T8R array with 4 bits per RRAM. We report SET/RESET endurance of 100K cycles and 10-year retention at 110°C.

Original language	English
Article number	9336666
Pages (from-to)	335-338
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	42
Issue number	3
DOIs	https://doi.org/10.1109/LED.2021.3055017
State	Published - Mar 2021

Keywords

1T8R
4-bits-per-RRAM
RRAM
gradual-SET/RESET

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10.1109/LED.2021.3055017

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title = "Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array",

abstract = "We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving 1T8R array with 4 bits per RRAM. We report SET/RESET endurance of 100K cycles and 10-year retention at 110°C.",

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author = "Hsieh, {E. R.} and X. Zheng and Le, {B. Q.} and Shih, {Y. C.} and Radway, {R. M.} and M. Nelson and S. Mitra and S. Wong",

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AU - Hsieh, E. R.

AU - Zheng, X.

AU - Le, B. Q.

AU - Shih, Y. C.

AU - Radway, R. M.

AU - Nelson, M.

AU - Mitra, S.

AU - Wong, S.

PY - 2021/3

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N2 - We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving 1T8R array with 4 bits per RRAM. We report SET/RESET endurance of 100K cycles and 10-year retention at 110°C.

AB - We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving 1T8R array with 4 bits per RRAM. We report SET/RESET endurance of 100K cycles and 10-year retention at 110°C.

KW - 1T8R

KW - 4-bits-per-RRAM

KW - RRAM

KW - gradual-SET/RESET

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M3 - 期刊論文

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

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ER -

Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array

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Keywords

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