Formation of TiSi2 thin films on stressed (001)Si substrates

S. L. Cheng; H. Y. Huang; Y. C. Peng; L. J. Chen; B. Y. Tsui; C. J. Tsai; S. S. Guo; Y. R. Yang; J. T. Lin

doi:10.1016/S0169-4332(98)00733-8

Formation of TiSi₂ thin films on stressed (001)Si substrates

S. L. Cheng, H. Y. Huang, Y. C. Peng, L. J. Chen, B. Y. Tsui, C. J. Tsai, S. S. Guo, Y. R. Yang, J. T. Lin

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

The effects of stress on the formation of TiSi₂ thin films have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the transformation of high-resistivity C49-TiSi₂ to low-resistivity C54-TiSi₂. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of C54-TiSi₂. For Ti on stressed (001)Si substrates after rapid thermal annealing (RTA), the thickness of TiSi₂ films was found to decrease and increase with the compressive and tensile stress level, respectively. In addition, the thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the compressively and tensile-stressed samples, respectively. The results indicated that the compressive stress hinders the migration of Si through the Ti/Si interface, so that the transformation of C49- to C54-TiSi₂ is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of C54-TiSi₂.

Original language	English
Pages (from-to)	295-299
Number of pages	5
Journal	Applied Surface Science
Volume	142
Issue number	1
DOIs	https://doi.org/10.1016/S0169-4332(98)00733-8
State	Published - Apr 1999
Event	Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 - Copenhagen, Denmark Duration: 6 Jul 1998 → 10 Jul 1998

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title = "Formation of TiSi2 thin films on stressed (001)Si substrates",

abstract = "The effects of stress on the formation of TiSi2 thin films have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the transformation of high-resistivity C49-TiSi2 to low-resistivity C54-TiSi2. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of C54-TiSi2. For Ti on stressed (001)Si substrates after rapid thermal annealing (RTA), the thickness of TiSi2 films was found to decrease and increase with the compressive and tensile stress level, respectively. In addition, the thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the compressively and tensile-stressed samples, respectively. The results indicated that the compressive stress hinders the migration of Si through the Ti/Si interface, so that the transformation of C49- to C54-TiSi2 is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of C54-TiSi2.",

author = "Cheng, {S. L.} and Huang, {H. Y.} and Peng, {Y. C.} and Chen, {L. J.} and Tsui, {B. Y.} and Tsai, {C. J.} and Guo, {S. S.} and Yang, {Y. R.} and Lin, {J. T.}",

note = "Funding Information: The research was supported by the National Science Council through a grant No. NSC86-2215-E007-015 and Electronics Research and Service Organization, ITRI.; Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 ; Conference date: 06-07-1998 Through 10-07-1998",

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volume = "142",

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TY - JOUR

T1 - Formation of TiSi2 thin films on stressed (001)Si substrates

AU - Cheng, S. L.

AU - Huang, H. Y.

AU - Peng, Y. C.

AU - Chen, L. J.

AU - Tsui, B. Y.

AU - Tsai, C. J.

AU - Guo, S. S.

AU - Yang, Y. R.

AU - Lin, J. T.

N1 - Funding Information: The research was supported by the National Science Council through a grant No. NSC86-2215-E007-015 and Electronics Research and Service Organization, ITRI.

PY - 1999/4

Y1 - 1999/4

N2 - The effects of stress on the formation of TiSi2 thin films have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the transformation of high-resistivity C49-TiSi2 to low-resistivity C54-TiSi2. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of C54-TiSi2. For Ti on stressed (001)Si substrates after rapid thermal annealing (RTA), the thickness of TiSi2 films was found to decrease and increase with the compressive and tensile stress level, respectively. In addition, the thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the compressively and tensile-stressed samples, respectively. The results indicated that the compressive stress hinders the migration of Si through the Ti/Si interface, so that the transformation of C49- to C54-TiSi2 is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of C54-TiSi2.

AB - The effects of stress on the formation of TiSi2 thin films have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the transformation of high-resistivity C49-TiSi2 to low-resistivity C54-TiSi2. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of C54-TiSi2. For Ti on stressed (001)Si substrates after rapid thermal annealing (RTA), the thickness of TiSi2 films was found to decrease and increase with the compressive and tensile stress level, respectively. In addition, the thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the compressively and tensile-stressed samples, respectively. The results indicated that the compressive stress hinders the migration of Si through the Ti/Si interface, so that the transformation of C49- to C54-TiSi2 is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of C54-TiSi2.

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U2 - 10.1016/S0169-4332(98)00733-8

DO - 10.1016/S0169-4332(98)00733-8

M3 - 會議論文

AN - SCOPUS:0032628449

SN - 0169-4332

VL - 142

SP - 295

EP - 299

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1

T2 - Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9

Y2 - 6 July 1998 through 10 July 1998

ER -

Formation of TiSi2 thin films on stressed (001)Si substrates

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Formation of TiSi₂ thin films on stressed (001)Si substrates