Formation of SiGe Nanorod arrays by combining nanoshpere lithography and Au-assisted chemical etching

C. H. Lai, Y. J. Lee, P. H. Yeh, S. W. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

SiGe Nanorod (NR) arrays have been fabricated by combining nanosphere lithography and Au-assisted chemical etching. With controlling the etching rate and duration, the length of SiGe NRs can be tuned from 300 nm to 1μnm. The morphology of SiGe NRs dramatically changed at different operating temperature. The results show a strong temperature dependence on fabrication of SiGe NRs. With TEM and SEM analysis, this work provides an effective approach to design the low-dimensional SiGe-based nanostructures for possible applications

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
Country/TerritoryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

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