Formation of SiCH 6-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition

S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M. J. Tsai, C. W. Liu

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7 Scopus citations

Abstract

Pretreatment of silicon surface with SiCH6 was used to modify the Stranski-Krastanow growth mode of Ge on Si(001) at 550 °C by ultrahigh vacuum chemical vapor deposition. With the appropriate SiCH6 mediation, the elongated Ge hut clusters can be transformed to highly uniform multifaceted domes with a high Ge composition at the core. These SiCH6 -mediated Ge dots have an average diameter and height of 38 and 7 nm, respectively. The modified growth mode for the formation of SiCH6 -mediated Ge dots can be attributed to (i) an almost hydrogen-passivated Si surface to limit the nucleation sites for dot formation and (ii) the incorporation of Ge atoms, repelled by the C-rich areas, into the existing Ge dots. The results also demonstrate that SiCH6 -mediated dots exhibit the improved field emission characteristics compared to shallow Ge huts.

Original languageEnglish
Article number073506
JournalJournal of Applied Physics
Volume98
Issue number7
DOIs
StatePublished - 1 Oct 2005

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