An experimental study is conducted which shows that a thin interposing Pt layer was found to act as a diffusion barrier and suppress the diffusion of Ni atoms effectively at temperatures below 500 °C. It indicates that NiSi phase can be stabilized by the presence of a thin Pt layer and the thermal stability of NiSi was improved considerably. The sheet resistance maintained the same low level in a wide temperature range. NiSi was found to be the only silicide phase for the Ni/Pt bilayer on (001)Si samples after annealing at 500-800 °C.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Issue number||4 I|
|State||Published - Jul 2000|
|Event||46th National Symposium of the American Vacuum Society - Seatlle, WA, USA|
Duration: 25 Oct 1999 → 29 Oct 1999