Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing

K. F. Liao; P. S. Chen; S. W. Lee; L. J. Chen; C. W. Liu

doi:10.1016/j.nimb.2005.04.094

Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing

K. F. Liao, P. S. Chen, S. W. Lee, L. J. Chen, C. W. Liu

Graduate Institute of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

High-quality, thin relaxed Si_0.8Ge_0.2 layers grown on Si(1 0 0) by ultrahigh-vacuum chemical vapor deposition (UHVCVD) have been formed with hydrogen (H)-implantation and subsequent thermal annealing. H-implantation was used to introduce a layer with a high density of defects (cavities) below a 200-nm-thick strained Si_0.8Ge_0.2. The peak of the implanted profile was located just ∼50 nm below the Si _0.8Ge_0.2/Si interface. The dependence of residual strain in pseudomorphic Si_0.8Ge_0.2 layer on the annealing temperature has been investigated. By adjusting the dose of H-implantation and the subsequent annealing conditions, almost relaxed (∼95%) Si _0.8Ge_0.2 layers with a smooth surface were achieved. The method provides a simple approach for the formation of thin relaxed Si _0.8Ge_0.2 with reduction in surface roughness for advanced complementary metal-oxide-semiconductor electronic devices. Published by Elsevier B.V.

Original language	English
Pages (from-to)	217-222
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	237
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.04.094
State	Published - Aug 2005
Event	Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 - Duration: 25 Oct 2004 → 27 Oct 2004

Keywords

Annealing
Hydrogen implantation
SiGe
Strain relaxation

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10.1016/j.nimb.2005.04.094

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@article{ceb242222e6946fcba602a2b5305cca0,

title = "Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing",

abstract = "High-quality, thin relaxed Si0.8Ge0.2 layers grown on Si(1 0 0) by ultrahigh-vacuum chemical vapor deposition (UHVCVD) have been formed with hydrogen (H)-implantation and subsequent thermal annealing. H-implantation was used to introduce a layer with a high density of defects (cavities) below a 200-nm-thick strained Si0.8Ge0.2. The peak of the implanted profile was located just ∼50 nm below the Si 0.8Ge0.2/Si interface. The dependence of residual strain in pseudomorphic Si0.8Ge0.2 layer on the annealing temperature has been investigated. By adjusting the dose of H-implantation and the subsequent annealing conditions, almost relaxed (∼95%) Si 0.8Ge0.2 layers with a smooth surface were achieved. The method provides a simple approach for the formation of thin relaxed Si 0.8Ge0.2 with reduction in surface roughness for advanced complementary metal-oxide-semiconductor electronic devices. Published by Elsevier B.V.",

keywords = "Annealing, Hydrogen implantation, SiGe, Strain relaxation",

author = "Liao, {K. F.} and Chen, {P. S.} and Lee, {S. W.} and Chen, {L. J.} and Liu, {C. W.}",

note = "Funding Information: The research was supported by the National Science Council through a Grant No. NSC 92-2215-E-007-003 and Ministry of Education Grant No. 91-E-FA04-1-4 as well as Electronics Research and Service Organization, Industrial Technology Research Institute.; Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 ; Conference date: 25-10-2004 Through 27-10-2004",

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doi = "10.1016/j.nimb.2005.04.094",

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volume = "237",

pages = "217--222",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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number = "1-2",

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Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing. / Liao, K. F.; Chen, P. S.; Lee, S. W. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 237, No. 1-2, 08.2005, p. 217-222.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing

AU - Liao, K. F.

AU - Chen, P. S.

AU - Lee, S. W.

AU - Chen, L. J.

AU - Liu, C. W.

N1 - Funding Information: The research was supported by the National Science Council through a Grant No. NSC 92-2215-E-007-003 and Ministry of Education Grant No. 91-E-FA04-1-4 as well as Electronics Research and Service Organization, Industrial Technology Research Institute.

PY - 2005/8

Y1 - 2005/8

N2 - High-quality, thin relaxed Si0.8Ge0.2 layers grown on Si(1 0 0) by ultrahigh-vacuum chemical vapor deposition (UHVCVD) have been formed with hydrogen (H)-implantation and subsequent thermal annealing. H-implantation was used to introduce a layer with a high density of defects (cavities) below a 200-nm-thick strained Si0.8Ge0.2. The peak of the implanted profile was located just ∼50 nm below the Si 0.8Ge0.2/Si interface. The dependence of residual strain in pseudomorphic Si0.8Ge0.2 layer on the annealing temperature has been investigated. By adjusting the dose of H-implantation and the subsequent annealing conditions, almost relaxed (∼95%) Si 0.8Ge0.2 layers with a smooth surface were achieved. The method provides a simple approach for the formation of thin relaxed Si 0.8Ge0.2 with reduction in surface roughness for advanced complementary metal-oxide-semiconductor electronic devices. Published by Elsevier B.V.

AB - High-quality, thin relaxed Si0.8Ge0.2 layers grown on Si(1 0 0) by ultrahigh-vacuum chemical vapor deposition (UHVCVD) have been formed with hydrogen (H)-implantation and subsequent thermal annealing. H-implantation was used to introduce a layer with a high density of defects (cavities) below a 200-nm-thick strained Si0.8Ge0.2. The peak of the implanted profile was located just ∼50 nm below the Si 0.8Ge0.2/Si interface. The dependence of residual strain in pseudomorphic Si0.8Ge0.2 layer on the annealing temperature has been investigated. By adjusting the dose of H-implantation and the subsequent annealing conditions, almost relaxed (∼95%) Si 0.8Ge0.2 layers with a smooth surface were achieved. The method provides a simple approach for the formation of thin relaxed Si 0.8Ge0.2 with reduction in surface roughness for advanced complementary metal-oxide-semiconductor electronic devices. Published by Elsevier B.V.

KW - Annealing

KW - Hydrogen implantation

KW - SiGe

KW - Strain relaxation

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DO - 10.1016/j.nimb.2005.04.094

M3 - 會議論文

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VL - 237

SP - 217

EP - 222

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

T2 - Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004

Y2 - 25 October 2004 through 27 October 2004

ER -

Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing

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Keywords

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