Formation of epitaxial β-FeSi2 nanodots array on strained Si/Si0.8Ge0.2 (001) substrate

H. C. Chen; K. F. Liao; S. W. Lee; S. L. Cheng; L. J. Chen

doi:10.1016/j.tsf.2004.02.058

Formation of epitaxial β-FeSi₂ nanodots array on strained Si/Si_0.8Ge_0.2 (001) substrate

H. C. Chen, K. F. Liao, S. W. Lee, S. L. Cheng, L. J. Chen

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

Epitaxial β-FeSi₂ nanodots were grown on strained Si/Si_0.8Ge_0.2 (001) substrates by solid phase epitaxy (SPE) method. High quality β-FeSi₂ nanodots were grown at 800°C by employing strained Si/Si_0.8Ge_0.2 substrates, owing to a decrease of the in-plane lattice mismatch between the lattice parameters of the β-FeSi₂ [001]and [010] directions and that of Si substrate. Ordered β-FeSi₂ arrays along 〈110〉 direction were observed to form on surfaces of strained Si/Si _0.8Ge_0.2 substrate. It is shown that dislocation slip originated from compositionally graded Si_1-xGe_x layers can produce local surface-strain and local thickness variation. The surface features are used for the fabrication of epitaxial β-FeSi₂ nanostructures on strained Si/Si_0.8Ge_0.2 substrate.

Original language	English
Pages (from-to)	44-47
Number of pages	4
Journal	Thin Solid Films
Volume	461
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2004.02.058
State	Published - 2 Aug 2004
Event	Proceedings of Symposium on Semiconducting Silicides - Yokohama, Japan Duration: 8 Oct 2003 → 13 Oct 2003

Keywords

Nanodot
Strained Si
β-FeSi

Access to Document

10.1016/j.tsf.2004.02.058

Cite this

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title = "Formation of epitaxial β-FeSi2 nanodots array on strained Si/Si0.8Ge0.2 (001) substrate",

abstract = "Epitaxial β-FeSi2 nanodots were grown on strained Si/Si0.8Ge0.2 (001) substrates by solid phase epitaxy (SPE) method. High quality β-FeSi2 nanodots were grown at 800°C by employing strained Si/Si0.8Ge0.2 substrates, owing to a decrease of the in-plane lattice mismatch between the lattice parameters of the β-FeSi2 [001]and [010] directions and that of Si substrate. Ordered β-FeSi2 arrays along 〈110〉 direction were observed to form on surfaces of strained Si/Si 0.8Ge0.2 substrate. It is shown that dislocation slip originated from compositionally graded Si1-xGex layers can produce local surface-strain and local thickness variation. The surface features are used for the fabrication of epitaxial β-FeSi2 nanostructures on strained Si/Si0.8Ge0.2 substrate.",

keywords = "Nanodot, Strained Si, β-FeSi",

author = "Chen, {H. C.} and Liao, {K. F.} and Lee, {S. W.} and Cheng, {S. L.} and Chen, {L. J.}",

note = "Funding Information: The research is supported by the Republic of China National Science Council grant no. NSC 91-2215-E-007-015 and Ministry of Education grant no. 91-E-FA04-1-4 as well as ERSO, ITRI.; Proceedings of Symposium on Semiconducting Silicides ; Conference date: 08-10-2003 Through 13-10-2003",

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TY - JOUR

T1 - Formation of epitaxial β-FeSi2 nanodots array on strained Si/Si0.8Ge0.2 (001) substrate

AU - Chen, H. C.

AU - Liao, K. F.

AU - Lee, S. W.

AU - Cheng, S. L.

AU - Chen, L. J.

N1 - Funding Information: The research is supported by the Republic of China National Science Council grant no. NSC 91-2215-E-007-015 and Ministry of Education grant no. 91-E-FA04-1-4 as well as ERSO, ITRI.

PY - 2004/8/2

Y1 - 2004/8/2

N2 - Epitaxial β-FeSi2 nanodots were grown on strained Si/Si0.8Ge0.2 (001) substrates by solid phase epitaxy (SPE) method. High quality β-FeSi2 nanodots were grown at 800°C by employing strained Si/Si0.8Ge0.2 substrates, owing to a decrease of the in-plane lattice mismatch between the lattice parameters of the β-FeSi2 [001]and [010] directions and that of Si substrate. Ordered β-FeSi2 arrays along 〈110〉 direction were observed to form on surfaces of strained Si/Si 0.8Ge0.2 substrate. It is shown that dislocation slip originated from compositionally graded Si1-xGex layers can produce local surface-strain and local thickness variation. The surface features are used for the fabrication of epitaxial β-FeSi2 nanostructures on strained Si/Si0.8Ge0.2 substrate.

AB - Epitaxial β-FeSi2 nanodots were grown on strained Si/Si0.8Ge0.2 (001) substrates by solid phase epitaxy (SPE) method. High quality β-FeSi2 nanodots were grown at 800°C by employing strained Si/Si0.8Ge0.2 substrates, owing to a decrease of the in-plane lattice mismatch between the lattice parameters of the β-FeSi2 [001]and [010] directions and that of Si substrate. Ordered β-FeSi2 arrays along 〈110〉 direction were observed to form on surfaces of strained Si/Si 0.8Ge0.2 substrate. It is shown that dislocation slip originated from compositionally graded Si1-xGex layers can produce local surface-strain and local thickness variation. The surface features are used for the fabrication of epitaxial β-FeSi2 nanostructures on strained Si/Si0.8Ge0.2 substrate.

KW - Nanodot

KW - Strained Si

KW - β-FeSi

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M3 - 會議論文

AN - SCOPUS:2942653021

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SP - 44

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T2 - Proceedings of Symposium on Semiconducting Silicides

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