Formation of epitaxial β-FeSi2 nanodots array on strained Si/Si0.8Ge0.2 (001) substrate

H. C. Chen, K. F. Liao, S. W. Lee, S. L. Cheng, L. J. Chen

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

Epitaxial β-FeSi2 nanodots were grown on strained Si/Si0.8Ge0.2 (001) substrates by solid phase epitaxy (SPE) method. High quality β-FeSi2 nanodots were grown at 800°C by employing strained Si/Si0.8Ge0.2 substrates, owing to a decrease of the in-plane lattice mismatch between the lattice parameters of the β-FeSi2 [001]and [010] directions and that of Si substrate. Ordered β-FeSi2 arrays along 〈110〉 direction were observed to form on surfaces of strained Si/Si 0.8Ge0.2 substrate. It is shown that dislocation slip originated from compositionally graded Si1-xGex layers can produce local surface-strain and local thickness variation. The surface features are used for the fabrication of epitaxial β-FeSi2 nanostructures on strained Si/Si0.8Ge0.2 substrate.

Original languageEnglish
Pages (from-to)44-47
Number of pages4
JournalThin Solid Films
Volume461
Issue number1
DOIs
StatePublished - 2 Aug 2004
EventProceedings of Symposium on Semiconducting Silicides - Yokohama, Japan
Duration: 8 Oct 200313 Oct 2003

Keywords

  • Nanodot
  • Strained Si
  • β-FeSi

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