Formation of C54-TiSi2 in titanium on nitrogen-ion-implanted (001)Si with a thin interposing Mo layer

S. L. Cheng, J. J. Jou, L. J. Chen, B. Y. Tsui

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Formation of TiSi2 in titanium on nitrogen-implanted (001)Si with a thin interposing Mo layer has been investigated. The presence of a Mo thin interposing layer was found to decrease the formation temperature of C54-TiSi2 by about 100°C. A ternary (Ti, Mo) Si2 phase was found to distribute in the silicide layer. The ternary compound is conjectured to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the other hand, the effect of grain boundary for decreasing transformation temperature was found to be less crucial. For Ti/Mo bilayer on 30 keV BF2+ or As+ + 20 keV, 1 × 1015/cm2 N2+ implanted samples, a continuous C54-TiSi2 layer was found to form in all samples annealed at 650-950°C. The presence of nitrogen atoms in TiSi2 is thought to lower the silicide/silicon interface energy and/or the silicide surface energy to maintain the integrity of the C54-TiSi2 layer at high temperatures.

Original languageEnglish
Pages (from-to)2061-2069
Number of pages9
JournalJournal of Materials Research
Issue number5
StatePublished - May 1999


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