Abstract
Three single-crystalline (Al2O3, GaN/Al2O3 and InAs) substrates are used to assist the formation of crystallographically preferred oriented CH3NH3PbI3 (MAPbI3) thin films. The estimation of the lattice mismatch at the MAPbI3/substrate interface and water-droplet contact angle experiments indicate that the formation of a preferred oriented MAPbI3 thin film is induced by the single-crystalline substrate and is insensitive to the surface wettibility of the substrate. Moreover, the experimental results suggest that the lattice mismatch at the MAPbI3/single-crystalline semiconductor interface can strongly influence the photovoltaic performance of tandem solar cells.
Original language | English |
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Article number | 066403 |
Journal | Materials Research Express |
Volume | 5 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2018 |
Keywords
- 2D-XRD
- CHNHPbI thin films
- crystalline substrate
- defect emissions
- lattice mismatch
- preferred orientation
- timeresolved PL