Fluorine-doped tin oxide films grown by pulsed directcurrent magnetron sputtering with an Sn target

Bo Huei Liao; Chien Cheng Kuo; Pin Jen Chen; Cheng Chung Lee

doi:10.1364/AO.50.00C106

Fluorine-doped tin oxide films grown by pulsed directcurrent magnetron sputtering with an Sn target

Bo Huei Liao, Chien Cheng Kuo, Pin Jen Chen, Cheng Chung Lee

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF₄/O ₂ gas were injected to enhance the optical and electrical properties of thefilms. The extinction coefficient was lower than 1:5 × 10 ^-3 in the range from 400 to 800nm when the CF₄/O ₂ ratio was 0.375. The resistivity of fluorine-dopedSnO₂ films (1:63 × 10-3 Ocm) deposited at 300 °C was 27.9 times smaller than that of undopedSnO₂ (4:55 × 10-2 Ocm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2:68 × 10 ^-4 Ωcm, which increased by less than 39% at a 450 °C annealing temperature for 1 h in air.

Original language	English
Pages (from-to)	C106-C110
Journal	Applied Optics
Volume	50
Issue number	9
DOIs	https://doi.org/10.1364/AO.50.00C106
State	Published - 20 Mar 2011

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@article{eb122f12500d452294ddd53974f4ec11,

title = "Fluorine-doped tin oxide films grown by pulsed directcurrent magnetron sputtering with an Sn target",

abstract = "Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF4/O 2 gas were injected to enhance the optical and electrical properties of thefilms. The extinction coefficient was lower than 1:5 × 10 -3 in the range from 400 to 800nm when the CF4/O 2 ratio was 0.375. The resistivity of fluorine-dopedSnO2 films (1:63 × 10-3 Ocm) deposited at 300 °C was 27.9 times smaller than that of undopedSnO2 (4:55 × 10-2 Ocm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2:68 × 10 -4 Ωcm, which increased by less than 39% at a 450 °C annealing temperature for 1 h in air.",

author = "Liao, {Bo Huei} and Kuo, {Chien Cheng} and Chen, {Pin Jen} and Lee, {Cheng Chung}",

year = "2011",

month = mar,

day = "20",

doi = "10.1364/AO.50.00C106",

language = "???core.languages.en_GB???",

volume = "50",

pages = "C106--C110",

journal = "Applied Optics",

issn = "1559-128X",

number = "9",

}

TY - JOUR

T1 - Fluorine-doped tin oxide films grown by pulsed directcurrent magnetron sputtering with an Sn target

AU - Liao, Bo Huei

AU - Kuo, Chien Cheng

AU - Chen, Pin Jen

AU - Lee, Cheng Chung

PY - 2011/3/20

Y1 - 2011/3/20

N2 - Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF4/O 2 gas were injected to enhance the optical and electrical properties of thefilms. The extinction coefficient was lower than 1:5 × 10 -3 in the range from 400 to 800nm when the CF4/O 2 ratio was 0.375. The resistivity of fluorine-dopedSnO2 films (1:63 × 10-3 Ocm) deposited at 300 °C was 27.9 times smaller than that of undopedSnO2 (4:55 × 10-2 Ocm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2:68 × 10 -4 Ωcm, which increased by less than 39% at a 450 °C annealing temperature for 1 h in air.

AB - Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF4/O 2 gas were injected to enhance the optical and electrical properties of thefilms. The extinction coefficient was lower than 1:5 × 10 -3 in the range from 400 to 800nm when the CF4/O 2 ratio was 0.375. The resistivity of fluorine-dopedSnO2 films (1:63 × 10-3 Ocm) deposited at 300 °C was 27.9 times smaller than that of undopedSnO2 (4:55 × 10-2 Ocm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2:68 × 10 -4 Ωcm, which increased by less than 39% at a 450 °C annealing temperature for 1 h in air.

UR - http://www.scopus.com/inward/record.url?scp=79952776447&partnerID=8YFLogxK

U2 - 10.1364/AO.50.00C106

DO - 10.1364/AO.50.00C106

M3 - 期刊論文

C2 - 21460922

AN - SCOPUS:79952776447

SN - 1559-128X

VL - 50

SP - C106-C110

JO - Applied Optics

JF - Applied Optics

IS - 9

ER -

Fluorine-doped tin oxide films grown by pulsed directcurrent magnetron sputtering with an Sn target

Abstract

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