Flip-chip assembled GaAs pHEMT Ka-band oscillator

Wei Kuo Huang; Yu An Liu; Che Ming Wang; Yue Ming Hsin; Cheng Yi Liu; Tsung Jung Yeh

doi:10.1109/LMWC.2006.887272

Flip-chip assembled GaAs pHEMT Ka-band oscillator

Wei Kuo Huang, Yu An Liu, Che Ming Wang, Yue Ming Hsin, Cheng Yi Liu, Tsung Jung Yeh

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this letter, we present a Ka-band oscillator with flip-chip assembled 0.15-μm-gate pHEMT. With a characterized 0.15-μm-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMT was flip-chip assembled on A1₂O₃ substrate where the passive components and coplanar waveguide connection were designed and fabricated. The measured output signal was at 27.55 GHz with an output power of 1.87 dBm and a phase noise of - 109 dBc/Hz at 1-MHz offset, respectively. To our knowledge, this is the first flip-chip assembled pHEMT oscillator in the Ka-band.

Original language	English
Pages (from-to)	67-69
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	17
Issue number	1
DOIs	https://doi.org/10.1109/LMWC.2006.887272
State	Published - Jan 2007

Keywords

Flip-chip
Microwave integrated circuit (MIC)
Oscillator
pHEMT

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10.1109/LMWC.2006.887272

Cite this

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title = "Flip-chip assembled GaAs pHEMT Ka-band oscillator",

abstract = "In this letter, we present a Ka-band oscillator with flip-chip assembled 0.15-μm-gate pHEMT. With a characterized 0.15-μm-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMT was flip-chip assembled on A12O3 substrate where the passive components and coplanar waveguide connection were designed and fabricated. The measured output signal was at 27.55 GHz with an output power of 1.87 dBm and a phase noise of - 109 dBc/Hz at 1-MHz offset, respectively. To our knowledge, this is the first flip-chip assembled pHEMT oscillator in the Ka-band.",

keywords = "Flip-chip, Microwave integrated circuit (MIC), Oscillator, pHEMT",

author = "Huang, {Wei Kuo} and Liu, {Yu An} and Wang, {Che Ming} and Hsin, {Yue Ming} and Liu, {Cheng Yi} and Yeh, {Tsung Jung}",

note = "Funding Information: Manuscript received August 4, 2006; revised September 13, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 94-2219-E-008-001.",

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journal = "IEEE Microwave and Wireless Components Letters",

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T1 - Flip-chip assembled GaAs pHEMT Ka-band oscillator

AU - Huang, Wei Kuo

AU - Liu, Yu An

AU - Wang, Che Ming

AU - Hsin, Yue Ming

AU - Liu, Cheng Yi

AU - Yeh, Tsung Jung

N1 - Funding Information: Manuscript received August 4, 2006; revised September 13, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 94-2219-E-008-001.

PY - 2007/1

Y1 - 2007/1

N2 - In this letter, we present a Ka-band oscillator with flip-chip assembled 0.15-μm-gate pHEMT. With a characterized 0.15-μm-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMT was flip-chip assembled on A12O3 substrate where the passive components and coplanar waveguide connection were designed and fabricated. The measured output signal was at 27.55 GHz with an output power of 1.87 dBm and a phase noise of - 109 dBc/Hz at 1-MHz offset, respectively. To our knowledge, this is the first flip-chip assembled pHEMT oscillator in the Ka-band.

AB - In this letter, we present a Ka-band oscillator with flip-chip assembled 0.15-μm-gate pHEMT. With a characterized 0.15-μm-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMT was flip-chip assembled on A12O3 substrate where the passive components and coplanar waveguide connection were designed and fabricated. The measured output signal was at 27.55 GHz with an output power of 1.87 dBm and a phase noise of - 109 dBc/Hz at 1-MHz offset, respectively. To our knowledge, this is the first flip-chip assembled pHEMT oscillator in the Ka-band.

KW - Flip-chip

KW - Microwave integrated circuit (MIC)

KW - Oscillator

KW - pHEMT

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U2 - 10.1109/LMWC.2006.887272

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VL - 17

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EP - 69

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 1

ER -

Flip-chip assembled GaAs pHEMT Ka-band oscillator

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Keywords

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