Flip-chip assembled GaAs pHEMT Ka-band oscillator

Wei Kuo Huang, Yu An Liu, Che Ming Wang, Yue Ming Hsin, Cheng Yi Liu, Tsung Jung Yeh

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


In this letter, we present a Ka-band oscillator with flip-chip assembled 0.15-μm-gate pHEMT. With a characterized 0.15-μm-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMT was flip-chip assembled on A12O3 substrate where the passive components and coplanar waveguide connection were designed and fabricated. The measured output signal was at 27.55 GHz with an output power of 1.87 dBm and a phase noise of - 109 dBc/Hz at 1-MHz offset, respectively. To our knowledge, this is the first flip-chip assembled pHEMT oscillator in the Ka-band.

Original languageEnglish
Pages (from-to)67-69
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number1
StatePublished - Jan 2007


  • Flip-chip
  • Microwave integrated circuit (MIC)
  • Oscillator
  • pHEMT


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