Fermi level of low-temperature-grown GaAs on Si-δ-doped GaAs

T. M. Hsu, W. C. Lee, J. R. Wu, J. I. Chyi

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Abstract

We have studied the Fermi level of low-temperature-grown GaAs on the top of Si-δ-doped GaAs by photoreflectance. The Fermi levels of the as-grown and annealed samples are measured by a method which involves the photovoltaic effect and the Fermi-level pinning. Our measurements determine the position of the Fermi-level pinning, and the results have been discussed in connection with the defect model and the buried-Schottky-barrier model.

Original languageEnglish
Pages (from-to)17215-17218
Number of pages4
JournalPhysical Review B
Volume51
Issue number23
DOIs
StatePublished - 1995

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