The feasibility of using plasma enhanced chemical vapor deposition TEOS (PETEOS) oxide and associated chemical mechanical polishing (CMP)to form a flat layer on the surface of a processed VLSI bulk Si wafer for direct bonding was evaluated. Results show that the PETEOS oxide can be used to create a very strong bond after annealing at temperatures as low as 300 °C.
|Number of pages||2|
|State||Published - 1996|
|Event||Proceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA|
Duration: 30 Sep 1996 → 3 Oct 1996
|Conference||Proceedings of the 1996 IEEE International SOI Conference|
|City||Sanibel Island, FL, USA|
|Period||30/09/96 → 3/10/96|