Fast-write resistive RAM (RRAM) for embedded applications

Shyh Shyuan Sheu, Kuo Hsing Cheng, Meng Fan Chang, Pei Chia Chiang, Wen Pin Lin, Heng Yuan Lee, Pang Shiu Chen, Yu Sheng Chen, Tai Yuan Wu, Frederick T. Chen, Keng Li Su, Ming Jer Kao, Ming Jinn Tsai

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


Editor's note: Especially for microcontroller and mobile applications, embedded nonvolatile memory is an important technology offering to reduce power and provide local persistent storage. This article describes a new resistive RAM device with fast write operation to improve the speed of embedded nonvolatile memories.

Original languageEnglish
Article number5590231
Pages (from-to)64-71
Number of pages8
JournalIEEE Design and Test of Computers
Issue number1
StatePublished - Jan 2011


  • design and test
  • fast access speed
  • multilevel
  • nonvolatile memory
  • resistive RAM
  • RRAM


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