Fano interference effect on the transition spectrum of single-electron transistors

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Abstract

We theoretically study the intraband transition spectrum of single-electron transistors (SETs) composed of individual self-assembled quantum dots. The polarization of SETs is obtained by using the nonequilibrium Green's function technique and the Anderson model with three energy levels. Due to nonradiative coupling between two excited states through the continuum of electrodes, Fano interference significantly influences the peak position and intensity of the infrared wavelength single-photon spectrum. In particular, Fano interference can be utilized to increase the emission efficiency of infrared photons.

Original languageEnglish
Article number155331
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number15
DOIs
StatePublished - 2006

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