Fabrication study of AIN solar-blind (<280nm) MSM photodetectors grown by low-temperature deposition

Meei Ru Chen, S. H. Chang, Tzu Chieh Chen, Chih Hsiang Hsu, H. L. Kao, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

AlN, an important semiconductor with the widest band gap among III-nitrides, was employed to construct solar blind metal-semiconductor-metal photodetectors (MSM-PDs). MSM-PDs were fabricated on AlN epitaxial thin films deposited on GaN/sapphire using a helicon sputtering system at a low temperature of 300 ̊C. The dark current of the device is as low as 200 fA at 20 V and the photocurrent illuminated by a D 2 lamp increases more than two orders of magnitude. The photocurrent increases almost linearly with the incident optical power at the wavelength of 200 nm. The results show that the low temperature grown AlN MSM device is suitable for the application of deep UV detection.

Original languageEnglish
Pages (from-to)224-228
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume207
Issue number1
DOIs
StatePublished - Jan 2010

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