Fabrication of vertical thin-GaN light-emitting diode by low-temperature Cu/Sn/Ag wafer bonding

Y. J. Chen, C. C. Chang, H. Y. Lin, S. C. Hsu, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Vertical thin-GaN LED was successfully fabricated on the GaN LED epi-layers grown on the patterned-sapphire substrate with the pyramidal pattern by low-temperature Cu/Sn/Ag wafer bonding at 150 °C. An inverted pyramidal pattern formed on the n-GaN surface after the GaN epi-layer was transferred onto Si wafer, which resulted from the pyramidal pattern on the patterned-sapphire substrate. The inverted pyramidal pattern has an equivalent function with roughening the n-GaN surface. With higher inverted pyramidal pattern coverage, the light extraction efficiency can be greatly enhanced. In addition, we found that the 4-fold increase (from 13.6% to 53.8%) in the pyramidal pattern coverage on patterned-sapphire substrate only gives the GaN LED epi-layer about 5.7% enhancement in the internal quantum efficiency.

Original languageEnglish
Pages (from-to)381-384
Number of pages4
JournalMicroelectronics Reliability
Volume52
Issue number2
DOIs
StatePublished - Feb 2012

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