Fabrication of single crystalline SiC layer on high temperature glass

Q. Y. Tong, T. H. Lee, P. Werner, U. Gösele, R. B. Bergmann, J. H. Werner

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Single crystalline 6H-SiC layers have been transferred from SiC wafers implanted with H+2 at 160 keV with 5.0 × 1016 ion cm-2 onto a high temperature (800°C) glass by anodic bonding and subsequent layer splitting at 725°C. The relatively rough SiC surface (rms 20 Å) prevents direct bonding but appears to be no obstacle for anodic bonding with glass. The activation energy of formation of optically detectable surface blisters caused by hydrogen filled microcracks in SiC samples served as a guideline to find a process window for the layer transfer approach.

Original languageEnglish
Pages (from-to)L111-L113
JournalJournal of the Electrochemical Society
Issue number5
StatePublished - May 1997


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