Fabrication of single crystalline SiC layer on high temperature glass

Q. Y. Tong; T. H. Lee; P. Werner; U. Gösele; R. B. Bergmann; J. H. Werner

doi:10.1149/1.1837628

Fabrication of single crystalline SiC layer on high temperature glass

Q. Y. Tong, T. H. Lee, P. Werner, U. Gösele, R. B. Bergmann, J. H. Werner

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Single crystalline 6H-SiC layers have been transferred from SiC wafers implanted with H⁺₂ at 160 keV with 5.0 × 10¹⁶ ion cm^-2 onto a high temperature (800°C) glass by anodic bonding and subsequent layer splitting at 725°C. The relatively rough SiC surface (rms 20 Å) prevents direct bonding but appears to be no obstacle for anodic bonding with glass. The activation energy of formation of optically detectable surface blisters caused by hydrogen filled microcracks in SiC samples served as a guideline to find a process window for the layer transfer approach.

Original language	English
Pages (from-to)	L111-L113
Journal	Journal of the Electrochemical Society
Volume	144
Issue number	5
DOIs	https://doi.org/10.1149/1.1837628
State	Published - May 1997

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abstract = "Single crystalline 6H-SiC layers have been transferred from SiC wafers implanted with H+2 at 160 keV with 5.0 × 1016 ion cm-2 onto a high temperature (800°C) glass by anodic bonding and subsequent layer splitting at 725°C. The relatively rough SiC surface (rms 20 {\AA}) prevents direct bonding but appears to be no obstacle for anodic bonding with glass. The activation energy of formation of optically detectable surface blisters caused by hydrogen filled microcracks in SiC samples served as a guideline to find a process window for the layer transfer approach.",

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T1 - Fabrication of single crystalline SiC layer on high temperature glass

AU - Tong, Q. Y.

AU - Lee, T. H.

AU - Werner, P.

AU - Gösele, U.

AU - Bergmann, R. B.

AU - Werner, J. H.

PY - 1997/5

Y1 - 1997/5

N2 - Single crystalline 6H-SiC layers have been transferred from SiC wafers implanted with H+2 at 160 keV with 5.0 × 1016 ion cm-2 onto a high temperature (800°C) glass by anodic bonding and subsequent layer splitting at 725°C. The relatively rough SiC surface (rms 20 Å) prevents direct bonding but appears to be no obstacle for anodic bonding with glass. The activation energy of formation of optically detectable surface blisters caused by hydrogen filled microcracks in SiC samples served as a guideline to find a process window for the layer transfer approach.

AB - Single crystalline 6H-SiC layers have been transferred from SiC wafers implanted with H+2 at 160 keV with 5.0 × 1016 ion cm-2 onto a high temperature (800°C) glass by anodic bonding and subsequent layer splitting at 725°C. The relatively rough SiC surface (rms 20 Å) prevents direct bonding but appears to be no obstacle for anodic bonding with glass. The activation energy of formation of optically detectable surface blisters caused by hydrogen filled microcracks in SiC samples served as a guideline to find a process window for the layer transfer approach.

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M3 - 期刊論文

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VL - 144

SP - L111-L113

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 5

ER -

Fabrication of single crystalline SiC layer on high temperature glass

Abstract

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