Fabrication of silicon nanostructure by metal-assisted etching and its effects to matrix-free laser desorption/ionization mass spectrometry

C. W. Tsao, J. T. Huang, Y. C. Cheng, W. Y. Chen, C. C. Chien

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Silicon nanostructure surface fabricated from metal-assisted etching have been demonstrated as high sensitivity matrix-free laser desorption/ionization mass spectrometry chip. The silicon nanostructure morphology was found to have direct effect to the mass spectrometry ionization efficiency. Creation of different silicon nanostructure morphologies by changing the metal thickness, etching time and etchant composition in metal-assisted process was explored and its effects to mass spectrometry ionization efficiency was investigated in this paper.

Original languageEnglish
Title of host publication14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010
Pages1286-1288
Number of pages3
StatePublished - 2010
Event14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010 - Groningen, Netherlands
Duration: 3 Oct 20107 Oct 2010

Publication series

Name14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010
Volume2

Conference

Conference14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010
Country/TerritoryNetherlands
CityGroningen
Period3/10/107/10/10

Keywords

  • Desorption/ionization on silicon
  • Matrix-free laser de-sorption/ionization mass spectrometry
  • Metal-assisted etching
  • Nanofilament silicon
  • Nanostructured silicon surface

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