Fabrication of Si nanowire arrays selectively formed on pre-patterned (001)Si substrates

S. L. Cheng, C. H. Lo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report here the successful fabrication of large-area size- and site-controlled periodic arrays of Si nanowires by employing the colloidal nanosphere lithography technique and Au-assisted selective chemical etching process. The vertically-aligned Si nanowires with diameters down to 190 nm and 90 nm were selectively formed at particular positions on the pre-patterned (001)Si substrates. All the Si nanowires produced were single crystalline in nature and their axial orientations were identified to be parallel to the [001] direction. The experimental results demonstrated that with suitable etching conditions, these synthesis schemes provide the capability to fabricate a variety of periodic arrays of Si-based nanodevices.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages519-520
Number of pages2
DOIs
StatePublished - 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 3 Jan 20108 Jan 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
Country/TerritoryChina
CityHongkong
Period3/01/108/01/10

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