Fabrication of si heterojunction solar cells using pdoped sinanocrystals embedded in SiNx films as emitters

Ping Jung Wu, Yu Cian Wang, I. Chen Chen

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Si heterojunction solar cells were fabricated on p-type single-crystal Si (sc-Si) substrates using phosphorus-doped Si nanocrystals (Si-NCs) embedded in SiNx (Si-NCs/SiNx) films as emitters. The Si-NCs were formed by post-annealing of silicon-rich silicon nitride films deposited by electron cyclotron resonance chemical vapor deposition. We investigate the influence of the N/Si ratio in the Si-NCs/SiNx films on their electrical and optical properties, as well as the photovoltaic properties of the fabricated heterojunction devices. Increasing the nitrogen content enhances the optical gap E04 while deteriorating the electrical conductivity of the Si-NCs/SiNx film, leading to an increased short-circuit current density and a decreased fill factor of the heterojunction device. These trends could be interpreted by a bi-phase model which describes the Si-NCs/SiNx film as a mixture of a high-transparency SiNx phase and a low-resistivity Si-NC phase. A preliminary efficiency of 8.6% is achieved for the Si-NCs/sc- Si heterojunction solar cell.

Original languageEnglish
Article number457
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 2013

Keywords

  • Emitter
  • Heterojunction solar cells
  • Si nanocrystals

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