Well-ordered arrays of needle-like and cone-like Si nanostructures have been successfully produced on (001)Si substrates. The morphology and dimensions of the tapered Si nanostructure arrays can be readily controlled by adjusting the Ag-nanoparticle catalytic etching/removal (ACER) cycles. All the produced vertical tapered Si nanostructures were single crystalline and their axial crystallographic orientation was the same as that of the (001)Si substrate. The produced long needle-like Si nanowires exhibited superior field emission properties compared to as-produced and short cone-like Si nanowires. The enhanced field emission performance of the long needle-like Si nanowire array can be attributed to the good vertical alignment, sharp tips, high aspect ratio, single-crystalline structure, and well-ordered arrangement. The experimental results present the exciting prospect that with appropriate control, the combined approach proposed here promises to be applicable for fabricating other highly-ordered, vertically-aligned tapered Si-based nanowire arrays and may offer potential applications in constructing various high efficiency Si-based field emission nanodevices.
|Number of pages||7|
|State||Published - 2017|