Projects per year
Abstract
This study reports a transparent p-type TiO2 thin film by DC reactive magnetron sputtering method with 10% O2 partial pressure. The p-type conduction of TiO2 thin film was also confirmed by Seebeck effect. The lowest resistivity (1.458×10-2 Ω·cm) of the studied TiO2 thin film occurs at the annealing temperature of 500 °C in the under N2 atmosphere ambient. We believe that the p-type conduction mechanism of the as-deposited TiO2 thin films with 10% O2 partial pressure could be caused by the defect reaction mechanism, i.e., the Ti2+-Ti4+ substitution reaction. A transparent p-n junction of p-TiO2/n-ITO was fabricated by photolithography and lift-off processes. The I-V curve of p-TiO2/n-ITO junction shows that p-TiO2/n-ITO p-n junction clearly exhibits a good diode characteristic with a turn-on voltage of about 3.19 V under forward-biased voltage, which corresponds to the band gap of the TiO2. It further proves that the current studied TiO2 thin film prepared with 10% O2 partial pressure is the p-type conduction.
Original language | English |
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Article number | 045229 |
Journal | AIP Advances |
Volume | 9 |
Issue number | 4 |
DOIs | |
State | Published - 1 Apr 2019 |
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- 3 Finished
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Low Temperature Cu/Pd Diffusion Bonding Development and Applying Cu-Pd Bonding on Thin-Gan Led Packaging Process(3/3)
Liu, C.-Y. (PI)
1/08/18 → 31/07/19
Project: Research
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Effect of LED Die-Attachment on Stress in GaN Eip-Layers and Anelastic Behavior(3/3)
Liu, C.-Y. (PI)
1/08/17 → 31/07/18
Project: Research
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Development of Cu Recycling for Micro Cu Powders Used in Electronics-Grade Cu Slurry( I )
Cheng, S.-L. (PI)
1/06/17 → 31/05/18
Project: Research